Developments in 300mm Low-Power Si Capacitive Modulators Invited paper
Résumé
We report on the development of high speed phase shifters for next generation of Si photonics transceivers, based on capacitive structures. Experimental measurements show a VL of 0.5V.cm in accumulation regime. We also show that the addition of a SiGe layer at the capacitive interface leads to an improvement of 25 % of the phase shifter efficiency.
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